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Jian Fan, Jonathan D. Yuen, Weibin Cui, Jason Seifter, Ali Reza Mohebbi, Mingfeng Wang, Huiqiong Zhou, Alan Heeger and Fred Wudl High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene Advanced Materials 24

Article first published online: 10 SEP 2012 | DOI: 10.1002/adma.201202195

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High-mobility organic thin film transistors based on a benzobisthiadiazole-containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of “edge-on” orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to 2.5 cm2 V−1 s−1.

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