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Shifeng Miao, Hua Li, Qingfeng Xu, Youyong Li, Shunjun Ji, Najun Li, Lihua Wang, Junwei Zheng and Jianmei Lu Tailoring of Molecular Planarity to Reduce Charge Injection Barrier for High-Performance Small-Molecule-Based Ternary Memory Device with Low Threshold Voltage Advanced Materials 24

Version of Record online: 13 SEP 2012 | DOI: 10.1002/adma.201202319

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By introducing a coplanar fluorenone into the center of an azo molecule, the turn-on voltages of the ternary memory devices are significantly decreased to lower than –2 V due to the improved crystallinity and the reduced charge injection barrier. The resulting low-power consumption devices will have great potential applications in high-performance chips for future portable nanoelectronic devices.

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