E-mail

E-mail a Wiley Online Library Link

Shifeng Miao, Hua Li, Qingfeng Xu, Youyong Li, Shunjun Ji, Najun Li, Lihua Wang, Junwei Zheng and Jianmei Lu Tailoring of Molecular Planarity to Reduce Charge Injection Barrier for High-Performance Small-Molecule-Based Ternary Memory Device with Low Threshold Voltage Advanced Materials 24

Version of Record online: 13 SEP 2012 | DOI: 10.1002/adma.201202319

Thumbnail image of graphical abstract

By introducing a coplanar fluorenone into the center of an azo molecule, the turn-on voltages of the ternary memory devices are significantly decreased to lower than –2 V due to the improved crystallinity and the reduced charge injection barrier. The resulting low-power consumption devices will have great potential applications in high-performance chips for future portable nanoelectronic devices.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field

SEARCH