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Xiaodan Gu, Zuwei Liu, Ilja Gunkel, S. T. Chourou, Sung Woo Hong, Deirdre L. Olynick and Thomas P. Russell High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates Advanced Materials 24

Version of Record online: 20 AUG 2012 | DOI: 10.1002/adma.201202361

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High-aspect-ratio sub-15-nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block copolymer reconstruction process and reactive ion etching is used to make the polymer mask. Silicon trenches are characterized by various methods and used as a master for subsequent imprinting of different materials. Silicon nanoholes are generated from a block copolymer with cylindrical microdomains oriented normal to the surface.

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