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Yuttapoom Puttisong, Irina A. Buyanova, Aaron J. Ptak, Charles W. Tu, Lutz Geelhaar, Henning Riechert and Weimin M. Chen Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys Advanced Materials 25

Article first published online: 26 OCT 2012 | DOI: 10.1002/adma.201202597

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The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.

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