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Satria Zulkarnaen Bisri, Jia Gao, Vladimir Derenskyi, Widianta Gomulya, Igor Iezhokin, Pavlo Gordiichuk, Andreas Herrmann and Maria Antonietta Loi High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes Advanced Materials 24

Version of Record online: 24 SEP 2012 | DOI: 10.1002/adma.201202699

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Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm2/V·s) with a high on/off ratio (106). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.

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