E-mail a Wiley Online Library Link

Pichaya Pattanasattayavong, Nir Yaacobi-Gross, Kui Zhao, Guy Olivier Ngongang Ndjawa, Jinhua Li, Feng Yan, Brian C. O'Regan, Aram Amassian and Thomas D. Anthopoulos Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature Advanced Materials 25

Version of Record online: 27 DEC 2012 | DOI: 10.1002/adma.201202758

Thumbnail image of graphical abstract

The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V−1 s−1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field