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Zhongjie Xu, Xin Guo, Mengyu Yao, Hongtao He, Lin Miao, Lu Jiao, Hongchao Liu, Jiannong Wang, Dong Qian, Jinfeng Jia, Wingkin Ho and Maohai Xie Anisotropic Topological Surface States on High-Index Bi2Se3 Films Advanced Materials 25

Version of Record online: 22 JAN 2013 | DOI: 10.1002/adma.201202936

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A high-index topological insulator thin film, Bi2Se3(221), is grown on a faceted InP(001) substrate by molecular-beam epitaxy (see model in figure (a)). Angle-resolved photoemission spectroscopy measurement reveals the Dirac cone structure of the surface states on such a surface (figure (b)). The Fermi surface is elliptical (figure (c)), suggesting an anisotropy along different crystallographic directions. Transport studies also reveal a strong anisotropy in Hall conductance.

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