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Jianyi Chen, Yunlong Guo, Yugeng Wen, Liping Huang, Yunzhou Xue, Dechao Geng, Bin Wu, Birong Luo, Gui Yu and Yunqi Liu Two-Stage Metal-Catalyst-Free Growth of High-Quality Polycrystalline Graphene Films on Silicon Nitride Substrates Advanced Materials 25

Article first published online: 19 NOV 2012 | DOI: 10.1002/adma.201202973

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By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm2 V−1 s−1, which is about three times the value of those grown on SiO2/Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice.

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