E-mail a Wiley Online Library Link

Abd-Elrazek Haj-Yahia, Omer Yaffe, Tatyana Bendikov, Hagai Cohen, Yishay Feldman, Ayelet Vilan and David Cahen Substituent Variation Drives Metal/Monolayer/Semiconductor Junctions from Strongly Rectifying to Ohmic Behavior Advanced Materials 25

Version of Record online: 19 NOV 2012 | DOI: 10.1002/adma.201203028

Thumbnail image of graphical abstract

An eight-orders of magnitude enhancement in current across Hg/X-styrene-Si junctions is caused by merely altering a substituent, X. Interface states are passivated and, depending on X, the Si Schottky junction encompasses the full range from Ohmic to strongly rectifying. This powerful electrostatic molecular effect has immediate implications for interface band alignment and sensing.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field