Yu Sheng Zhou, Ronan Hinchet, Ya Yang, Gustavo Ardila, Rudeesun Songmuang, Fang Zhang, Yan Zhang, Weihua Han, Ken Pradel, Laurent Montès, Mireille Mouis and Zhong Lin Wang Nano-Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect Advanced Materials 25
Version of Record online: 19 NOV 2012 | DOI: 10.1002/adma.201203263
Enhanced transverse force sensitivity of vertically aligned GaN nanowires is demonstrated using the piezotronic effect. The transverse force sensitivity is calculated to be 1.24 ± 0.13 ln(A)/nN, with a resolution better than 16 nN and the response time less than 5 ms. The nano-Newton force resolution shows the potential for piezoelectric semiconductor materials to be used as the main building block for micro-/nanosensor arrays or artificial skin.
Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf
Required = Required Field