E-mail a Wiley Online Library Link

Yu Sheng Zhou, Ronan Hinchet, Ya Yang, Gustavo Ardila, Rudeesun Songmuang, Fang Zhang, Yan Zhang, Weihua Han, Ken Pradel, Laurent Montès, Mireille Mouis and Zhong Lin Wang Nano-Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect Advanced Materials 25

Article first published online: 19 NOV 2012 | DOI: 10.1002/adma.201203263

Thumbnail image of graphical abstract

Enhanced transverse force sensitivity of vertically aligned GaN nanowires is demonstrated using the piezotronic effect. The transverse force sensitivity is calculated to be 1.24 ± 0.13 ln(A)/nN, with a resolution better than 16 nN and the response time less than 5 ms. The nano-Newton force resolution shows the potential for piezoelectric semiconductor materials to be used as the main building block for micro-/nanosensor arrays or artificial skin.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field