E-mail

E-mail a Wiley Online Library Link

S. Balatti, S. Larentis, D. C. Gilmer and D. Ielmini Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament Advanced Materials 25

Version of Record online: 3 JAN 2013 | DOI: 10.1002/adma.201204097

Thumbnail image of graphical abstract

Multilevel operation in resistive switching memory (RRAM) based on HfOx is demonstrated through variable sizes and orientations of the conductive filament. Memory states with the same resistance, but opposite orientation of defects, display a different response to an applied read voltage, therefore allowing an improvement of the information stored in each physical cell. The multilevel scheme allows a 50% increase (from 2 to 3 bits) of the stored information.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field

SEARCH