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Jung Ho Yoon, Jeong Hwan Han, Ji Sim Jung, Woojin Jeon, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Kyung Jean Yoon, Min Hwan Lee and Cheol Seong Hwang Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots Advanced Materials 25

Version of Record online: 6 FEB 2013 | DOI: 10.1002/adma.201204572

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Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

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