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Lise Lahourcade, Naomi C. Coronel, Kris T. Delaney, Sujeet K. Shukla, Nicola A. Spaldin and Harry A. Atwater Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2 Advanced Materials 25

Version of Record online: 6 FEB 2013 | DOI: 10.1002/adma.201204718

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ZnSnN2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna21 crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.

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