Lise Lahourcade, Naomi C. Coronel, Kris T. Delaney, Sujeet K. Shukla, Nicola A. Spaldin and Harry A. Atwater Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2 Advanced Materials 25
ZnSnN2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna21 crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.
Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf