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Benjamin D. Naab, Scott Himmelberger, Ying Diao, Koen Vandewal, Peng Wei, Björn Lussem, Alberto Salleo and Zhenan Bao High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films Advanced Materials 25

Version of Record online: 1 JUL 2013 | DOI: 10.1002/adma.201205098

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An N-Type organic thin-film transistor (OTFT) based on doped 6,13-Bis(triisopropylsilylethynyl)pentacene is presented. A transition from p-type to n-type occurrs with increasing doping concentrations, and the highest performing n-channel OTFTs are obtained with 50 mol% dopant. X-ray diffraction, scanning Auger microscopy, and secondary ionization mass spectrometry are used to characterize the morphology of the blends. The high performance of the obtained transistors is attributed to the highly crystalline and aligned nature of the doped thin films.

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