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Xiaodan Gu, Zuwei Liu, Ilja Gunkel, S. T. Chourou, Sung Woo Hong, Deirdre L. Olynick and Thomas P. Russell Patterning: High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates (Adv. Mater. 42/2012) Advanced Materials 24

Version of Record online: 2 NOV 2012 | DOI: 10.1002/adma.201290259

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On page 5688, Thomas P. Russell, Deirdre L. Olynick, and co-workers show that high-aspect-ratio sub-15-nm silicon nanotrenches can be directly patterned from low temperature plasma etching of a block copolymer mask. This method allows the patterning of silicon with sub-15-nm structures on wafer size scale, and with high thoughput and relatively low cost.

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