Xiaodan Gu, Zuwei Liu, Ilja Gunkel, S. T. Chourou, Sung Woo Hong, Deirdre L. Olynick and Thomas P. Russell Patterning: High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates (Adv. Mater. 42/2012) Advanced Materials 24
On page 5688, Thomas P. Russell, Deirdre L. Olynick, and co-workers show that high-aspect-ratio sub-15-nm silicon nanotrenches can be directly patterned from low temperature plasma etching of a block copolymer mask. This method allows the patterning of silicon with sub-15-nm structures on wafer size scale, and with high thoughput and relatively low cost.
Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf