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Christian Melzer, Christopher Siol and Heinz von Seggern Transit Phenomena in Organic Field-Effect Transistors Through Kelvin-Probe Force Microscopy Advanced Materials 25

Version of Record online: 29 APR 2013 | DOI: 10.1002/adma.201300004

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The temporal evolution of the surface-potential distribution in the channel of pentacene based field-effect transistors is investigated during the charge reversal from the electron to the hole dominated operation. This measurement allows the determination of the carrier density and electric field dependent hole mobility in the sub-threshold regime of the transistor.

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