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Kihyon Hong, Se Hyun Kim, Keun Hyung Lee and C. Daniel Frisbie Printed, sub-2V ZnO Electrolyte Gated Transistors and Inverters on Plastic Advanced Materials 25

Version of Record online: 20 MAR 2013 | DOI: 10.1002/adma.201300211

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Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm−2 V−1 s−1), low operation voltage (<2 V), and good electrical/mechanical stabilities.

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