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Morteza Fakhri, Nikolai Babin, Andreas Behrendt, Timo Jakob, Patrick Görrn and Thomas Riedl Facile Encapsulation of Oxide based Thin Film Transistors by Atomic Layer Deposition based on Ozone Advanced Materials 25

Article first published online: 17 APR 2013 | DOI: 10.1002/adma.201300549

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A simplified encapsulation strategy for metal-oxide based TFTs, using ozone instead of water as an oxygen source in a low-temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy- and time-consuming post-treatment processes can be avoided. This concept is widely applicable to various encapsulation materials (e.g., Al2O3, TiO2, ZrO2) and metal-oxide channel semiconductors (e.g., zinc–tin–oxide (ZTO), indium–gallium–zinc–oxide (IGZO)).

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