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Anna Marzegalli, Fabio Isa, Heiko Groiss, Elisabeth Müller, Claudiu V. Falub, Alfonso G. Taboada, Philippe Niedermann, Giovanni Isella, Friedrich Schäffler, Francesco Montalenti, Hans von Känel and Leo Miglio Unexpected Dominance of Vertical Dislocations in High-Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning Advanced Materials 25

Version of Record online: 21 JUN 2013 | DOI: 10.1002/adma.201300550

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An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film, demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts.

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