Xiaopeng Li, Yanjun Xiao, Jin Ho Bang, Dominik Lausch, Sylke Meyer, Paul-Tiberiu Miclea, Jin-Young Jung, Stefan L. Schweizer, Jung-Ho Lee and Ralf B. Wehrspohn Upgraded Silicon Nanowires by Metal-Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar-Grade Silicon Advanced Materials 25
Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell.
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