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Scott A. Chambers, Meng Gu, Peter V. Sushko, Hao Yang, Chongmin Wang and Nigel D. Browning Ultralow Contact Resistance at an Epitaxial Metal/Oxide Heterojunction Through Interstitial Site Doping Advanced Materials 25

Version of Record online: 6 MAY 2013 | DOI: 10.1002/adma.201301030

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Heteroepitaxial growth of Cr metal on Nb-doped SrTiO3(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low.

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