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Pablo Stoliar, Laurent Cario, Etiene Janod, Benoit Corraze, Catherine Guillot-Deudon, Sabrina Salmon-Bourmand, Vincent Guiot, Julien Tranchant and Marcelo Rozenberg Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators Advanced Materials 25

Article first published online: 6 MAY 2013 | DOI: 10.1002/adma.201301113

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A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.

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