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Wenjing Zhang, Jing-Kai Huang, Chang-Hsiao Chen, Yung-Huang Chang, Yuh-Jen Cheng and Lain-Jong Li High-Gain Phototransistors Based on a CVD MoS2 Monolayer Advanced Materials 25

Version of Record online: 23 MAY 2013 | DOI: 10.1002/adma.201301244

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A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W−1) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS2, decreasing the carrier mobility, photoresponsivity, and photogain.

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