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Chee Huei Lee, Shengyong Qin, Madhusudan A. Savaikar, Jiesheng Wang, Boyi Hao, Dongyan Zhang, Douglas Banyai, John A. Jaszczak, Kendal W. Clark, Juan-Carlos Idrobo, An-Ping Li and Yoke Khin Yap Room-Temperature Tunneling Behavior of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots Advanced Materials 25

Version of Record online: 17 JUN 2013 | DOI: 10.1002/adma.201301339

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One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

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