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Yen-Hung Lin, Hendrik Faber, Kui Zhao, Qingxiao Wang, Aram Amassian, Martyn McLachlan and Thomas D. Anthopoulos High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C Advanced Materials 25

Article first published online: 25 JUN 2013 | DOI: 10.1002/adma.201301622

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An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180 °C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic.

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