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Sungmin Jung, Ki-Ryong Song, Sung-Nam Lee and Hyunsoo Kim Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost-Competitive Light Emitters Advanced Materials 25

Version of Record online: 17 JUN 2013 | DOI: 10.1002/adma.201301640

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Spotlight on etching: (11-22) semipolar GaN plane light-emitting diodes (LEDs) are demonstrated using a wet-etching process. A trigonal prism cell structure with a (0001) c plane and nnn{10-10} m planes is formed after KOH wet etching, and leads to a better ohmic contact and enhanced light extraction. LEDs fabricated by wet etching show excellent output performance 1.89 times higher than that of the reference LEDs.

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