E-mail a Wiley Online Library Link

Gunuk Wang, Adam C. Lauchner, Jian Lin, Douglas Natelson, Krishna V. Palem and James M. Tour High-Performance and Low-Power Rewritable SiOx 1 kbit One Diode–One Resistor Crossbar Memory Array Advanced Materials 25

Version of Record online: 8 JUL 2013 | DOI: 10.1002/adma.201302047

Thumbnail image of graphical abstract

An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx-based one diode–one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field