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Gunuk Wang, Adam C. Lauchner, Jian Lin, Douglas Natelson, Krishna V. Palem and James M. Tour High-Performance and Low-Power Rewritable SiOx 1 kbit One Diode–One Resistor Crossbar Memory Array Advanced Materials 25

Article first published online: 8 JUL 2013 | DOI: 10.1002/adma.201302047

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An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx-based one diode–one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.

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