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Young Joon Hong, Jae Won Yang, Wi Hyoung Lee, Rodney S. Ruoff, Kwang S. Kim and Takashi Fukui Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs Advanced Materials 25

Version of Record online: 25 SEP 2013 | DOI: 10.1002/adma.201302312

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Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.

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