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Sung-Hwan Bae, Sangmin Lee, Hyun Koo, Long Lin, Bong Hyun Jo, Chan Park and Zhong Lin Wang The Memristive Properties of a Single VO2 Nanowire with Switching Controlled by Self-Heating Advanced Materials 25

Version of Record online: 2 AUG 2013 | DOI: 10.1002/adma.201302511

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A two-terminal memristor memory based on a single VO2 nanowire is reported that can not only provide switchable resistances in a large range of about four orders of magnitude but can also maintain the resistances by a low bias voltage. The phase transition of the single VO2 nanowire was driven by the bias voltage of 0.34 V without using any heat source. The memristive behavior of the single VO2 nanowire was confirmed by observing the switching and non-volatile properties of resistances when voltage pulses and low bias voltage were applied, respectively. Furthermore, multiple retainable resistances in a large range of about four orders of magnitude can be utilized by controlling the number and the amount of voltage pulses under the low bias voltage. This is a key step towards the development of new low-power and two-terminal memory devices for next-generation non-volatile memories.

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