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Yen-Hung Lin, Hendrik Faber, Kui Zhao, Qingxiao Wang, Aram Amassian, Martyn McLachlan and Thomas D. Anthopoulos Correction: High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C Advanced Materials 25

Article first published online: 9 SEP 2013 | DOI: 10.1002/adma.201303701

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