Paul Winget, Laura K. Schirra, David Cornil, Hong Li, Veaceslav Coropceanu, Paul F. Ndione, Ajaya K. Sigdel, David S. Ginley, Joseph J. Berry, Jaewon Shim, Hyungchui Kim, Bernard Kippelen, Jean-Luc Brédas and Oliver L. A. Monti Defect-Driven Interfacial Electronic Structures at an Organic/Metal-Oxide Semiconductor Heterojunction Advanced Materials 26
Article first published online: 15 MAY 2014 | DOI: 10.1002/adma.201305351
The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.
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