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Su-Ting Han, Ye Zhou, Chundong Wang, Lifang He, Wenjun Zhang and V. A. L. Roy Flexible Electronics: Layer-by-Layer-Assembled Reduced Graphene Oxide/Gold Nanoparticle Hybrid Double-Floating-Gate Structure for Low-Voltage Flexible Flash Memory (Adv. Mater. 6/2013) Advanced Materials 25

Article first published online: 7 FEB 2013 | DOI: 10.1002/adma.201370033

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V. A. L. Roy and co-workers report on page 872 a hybrid double floating gate low voltage flexible flash memory device by utilizing rGO sheets monolayer and Au NPs array as upper and lower floating gates respectively. As a buffer layer, rGO traps charges and also introduces an energy barrier between Au NPs and the channel, eventually enhancing both the retention time and memory window. The proposed memory device has been extended to flexible substrates to facilitate this method to build innovative flash memories.

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