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Kihyon Hong, Se Hyun Kim, Keun Hyung Lee and C. Daniel Frisbie Organic Electronics: Printed, sub-2V ZnO Electrolyte Gated Transistors and Inverters on Plastic (Adv. Mater. 25/2013) Advanced Materials 25

Version of Record online: 1 JUL 2013 | DOI: 10.1002/adma.201370161

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Printed, flexible ZnO electrolyte-gated transistors (EGTs) and inverters are demonstrated by C. Daniel Frisbie and co-workers on page 3413. ZnO-EGTs with high capacitance ion-gel gate insulators are printed on polyimide and the devices exhibit high electron mobility (1.6 cm−2 V−1 s−1), low operation voltage (<2 V), and good electrical and mechanical stability. These printed n-type EGTs are promising for next generation flexible devices.

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