Jeong Gon Son, Myungwoo Son, Kyeong-Joo Moon, Byoung Hun Lee, Jae-Min Myoung, Michael S. Strano, Moon-Ho Ham and Caroline A. Ross Field-Effect Transistors: Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography (Adv. Mater. 34/2013) Advanced Materials 25
Arrays of field-effect transistors are described by Caroline Ross, Moon-Ho Ham and co-workers on page 4723. These are based on highly aligned sub-10 nm graphene nanoribbons that are fabricated over large areas by etching CVD-grown graphene, using a mask made by the directed self-assembly of a cylindrical PS-block-PDMS block copolymer under solvent annealing guided by a removable template.
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