Seung-Eon Ahn, Sanghun Jeon, Youg Woo Jeon, Changjung Kim, Myoung-Jae Lee, Chang-Won Lee, Jongbong Park, Ihun Song, Arokia Nathan, Sungsik Lee and U-In Chung High-Performance Nanowire Oxide Photo-Thin Film Transistor Advanced Materials 25
A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 106 test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.
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