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Noboru Yamada, Rie Kojima, Kazuya Hisada, Takashi Mihara, Akio Tsuchino, Norihito Fujinoki, Masahiro Birukawa, Toshiyuki Matsunaga, Nobuhiro Yasuda, Yoshimitsu Fukuyama, Kiminori Ito, Yoshihito Tanaka, Shigeru Kimura and Masaki Takata Phase-Change Nanodot Material for an Optical Memory Advanced Optical Materials 1

Version of Record online: 2 AUG 2013 | DOI: 10.1002/adom.201300201

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Crystallization of a 50 nm phase-change nanodot material, Ge10Sb90, embedded in multilayered structure, is triggered by 300 ps laser excitation. Crystallization takes place with a short time delay of several nanoseconds with large optical changes. The time delay could be shortened by Sb-seed layers and a NiCr heat-generating layer, creating an optical storage material with very small mark size.

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