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Prasert Sinsermsuksakul, Jaeyeong Heo, Wontae Noh, Adam S. Hock and Roy G. Gordon Atomic Layer Deposition of Tin Monosulfide Thin Films Advanced Energy Materials 1

Version of Record online: 12 SEP 2011 | DOI: 10.1002/aenm.201100330

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Pure, stoichiometric, single-phase tin monosulfide (SnS) thin films are successfully deposited by atomic layer deposition (ALD) using the reaction of bis(N,N′-diisopropylacetamidinato)tin(II) [Sn(MeC(N-iPr)2)2] and hydrogen sulfide (H2S) at low temperatures (100 to 200 °C). This material is a promising absorber layer in thin film solar cells since it is cheap, non-toxic, and earth-abundant, potentially providing inexpensive PV modules to reach the global energy demand at TW levels.

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