E-mail

E-mail a Wiley Online Library Link

Prasert Sinsermsuksakul, Jaeyeong Heo, Wontae Noh, Adam S. Hock and Roy G. Gordon Atomic Layer Deposition of Tin Monosulfide Thin Films Advanced Energy Materials 1

Version of Record online: 12 SEP 2011 | DOI: 10.1002/aenm.201100330

Thumbnail image of graphical abstract

Pure, stoichiometric, single-phase tin monosulfide (SnS) thin films are successfully deposited by atomic layer deposition (ALD) using the reaction of bis(N,N′-diisopropylacetamidinato)tin(II) [Sn(MeC(N-iPr)2)2] and hydrogen sulfide (H2S) at low temperatures (100 to 200 °C). This material is a promising absorber layer in thin film solar cells since it is cheap, non-toxic, and earth-abundant, potentially providing inexpensive PV modules to reach the global energy demand at TW levels.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field

SEARCH