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Dr. Liang-Hsiang Chen, Tarng-Shiang Hu, Dr. Peng-Yi Huang, Prof. Choongik Kim, Ching-Hao Yang, Juin-Jie Wang, Dr. Jing-Yi Yan, Dr. Jia-Chong Ho, Dr. Cheng-Chung Lee and Prof. Ming-Chou Chen Enhanced Performance of Solution-Processed TESPE-ADT Thin-Film Transistors ChemPhysChem 14

Article first published online: 14 JUN 2013 | DOI: 10.1002/cphc.201300317

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A solution-processed anthradithiophene derivative, 5,11-bis(4-triethylsilylphenylethynyl)anthradithiophene (TESPE-ADT), is studied for use as the semiconducting material in thin-film transistors (TFTs). Varying solution processing techniques on various gate dielectrics as well as additional post-treatment afford enhanced device performance with hole mobilities as high as ∼0.12 cm2 V−1 s−1.

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