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Dr. Kerim Samedov, Dr. Yilmaz Aksu and Prof. Dr. Matthias Driess From Molecular Gallium and Indium Siloxide Precursors to Amorphous Semiconducting Transparent Oxide Layers for Applications in Thin-Film Field-Effect Transistors ChemPlusChem 77

Version of Record online: 16 JUL 2012 | DOI: 10.1002/cplu.201200086

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Metalorganics for supreme linkages: New molecular precursors for low-temperature synthesis of amorphous indium and gallium oxide for electronic applications have been synthesized and probed successfully for applications as thin-film field-effect transistors (FET; see figure). These films exhibit very good FET performance with a high field-effect mobility of 3.0×10−1 cm2 V−1 s and on/off current ratio of 108.

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