E-mail a Wiley Online Library Link

Dr. Kerim Samedov, Dr. Yilmaz Aksu and Prof. Dr. Matthias Driess From Molecular Gallium and Indium Siloxide Precursors to Amorphous Semiconducting Transparent Oxide Layers for Applications in Thin-Film Field-Effect Transistors ChemPlusChem 77

Version of Record online: 16 JUL 2012 | DOI: 10.1002/cplu.201200086

Thumbnail image of graphical abstract

Metalorganics for supreme linkages: New molecular precursors for low-temperature synthesis of amorphous indium and gallium oxide for electronic applications have been synthesized and probed successfully for applications as thin-film field-effect transistors (FET; see figure). These films exhibit very good FET performance with a high field-effect mobility of 3.0×10−1 cm2 V−1 s and on/off current ratio of 108.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field