Bumjoon Kim, Kwangtaek Lee, Samseok Jang, Junggeun Jhin, Seungjae Lee, Jonghyeob Baek, Youngmoon Yu, Jaesang Lee and Dongjin Byun Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High-Dose, N+ Ion Implantation Chemical Vapor Deposition 16
A single-step-maskless ELOG GaN layer was grown on a Si (111) substrate using high-dose N+-ion implantation. The GaN layer on the N+-ion-implanted region was polycrystalline and acted as a mask for the ELO process. Complete coalescence was achieved with a flat surface. CL microscopy and TEM demonstrated the high optical and crystalline quality of the ELOG GaN layer.
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