E-mail

E-mail a Wiley Online Library Link

Bumjoon Kim, Kwangtaek Lee, Samseok Jang, Junggeun Jhin, Seungjae Lee, Jonghyeob Baek, Youngmoon Yu, Jaesang Lee and Dongjin Byun Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High-Dose, N+ Ion Implantation Chemical Vapor Deposition 16

Version of Record online: 22 MAR 2010 | DOI: 10.1002/cvde.200906807

A single-step-maskless ELOG GaN layer was grown on a Si (111) substrate using high-dose N+-ion implantation. The GaN layer on the N+-ion-implanted region was polycrystalline and acted as a mask for the ELO process. Complete coalescence was achieved with a flat surface. CL microscopy and TEM demonstrated the high optical and crystalline quality of the ELOG GaN layer.

Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf

Required = Required Field

SEARCH