Kate Black, Paul R. Chalker, Anthony C. Jones, Peter J. King, John L. Roberts and Peter N. Heys A New Method for the Growth of Zinc Oxide Nanowires by MOCVD using Oxygen-Donor Adducts of Dimethylzinc Chemical Vapor Deposition 16
A new method has been developed for the growth of ZnO nanowires by MOCVD using the dimethylzinc adducts [Me2Zn(L)] (L = tetrahydrofuran, tetrahydropyran or furan). These adducts prevent pre-reaction with oxygen and ZnO films deposited at 500 oC showed nanowire morphology (see Fig. below) and intense near band-edge photoluminescence.
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