Ke Xu, Andrian P. Milanov, Harish Parala, Christian Wenger, Canan Baristiran-Kaynak, Kaoutar Lakribssi, Teodor Toader, Claudia Bock, Detlef Rogalla, Hans-Werner Becker, Ulrich Kunze and Anjana Devi Atomic Layer Deposition of HfO2 Thin Films Employing a Heteroleptic Hafnium Precursor Chemical Vapor Deposition 18
The application of a heteroleptic hafnium amide-guanidinate precursor [Hf(NMe2)2(NMe2-Guan)2] for the deposition of HfO2 thin films via a water assisted ALD process has been demonstrated for the first time. This compound showed self-limiting ALD type growth characteristics with the growth rates as high as 1.0–1.2 Å per cycle in the temperature range 100–225 °C. Typical ALD characteristics such as saturation behavior and linear dependence on the film thickness as a function of number of cycles were verified at different temperatures within the ALD window. The as-deposited HfO2 films were characterized by AFM, SEM, RBS, XPS and electrical measurements.
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