Peter Antony Premkumar, Michael Toeller, Christoph Adelmann, Johan Meersschaut, Alexis Franquet, Olivier Richard, Hilde Tielens, Bert Brijs, Alain Moussa, Thierry Conard, Hugo Bender, Marc Schaekers, Jorge A. Kittl, Malgorzata Jurczak and Sven Van Elshocht NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)2 and Ozone as Precursors Chemical Vapor Deposition 18
Article first published online: 5 MAR 2012 | DOI: 10.1002/cvde.201106949
NiO thin films synthesized using Ni(dmamb)2 and ozone precursors were studied for ALD characteristics and film properties were evaluated. The O3 and Ni(dmamb)2 half cycle studies showed saturation for the former and slow non-saturation for the latter reactant. The films are polycrystalline and exhibit uniform and smooth morphology across the wafer with low impurity level. Comparable film qualities were obtained also by CVD using O2 as the oxidizer for Ni(dmamb)2.
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