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Hao Zhuang, Lei Zhang, Thorsten Staedler and Xin Jiang Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD Chemical Vapor Deposition 19

Version of Record online: 18 FEB 2013 | DOI: 10.1002/cvde.201207011

Low-temperature, hetero-epitaxial growth of 3C-SiC film on Si is achieved using microwave plasma CVD. Good epitaxial matching between SiC film and the Si substrate is obtained. No microvoids or channels are observed at the SiC/Si interface. The results show that MWCVD may be a potent approach for obtaining large-scale, high-quality, single-crystalline 3C-SiC films.

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