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Jay J. Senkevich Parylene AF-4 via the Trapping of a Phenoxy Leaving Group Chemical Vapor Deposition 19

Article first published online: 30 OCT 2013 | DOI: 10.1002/cvde.201304321

A unique method of depositing parylene AF-4 via the cleavage and trapping of a phenoxy leaving group is presented. The leaving group is non-corrosive and the synthetic routes can be readily scalable. The method presented only works with parylene AF-4 because its threshold temperature (∼30°C) is lower than the melting point of the phenoxy radical (∼40°C). This method may prove to be a viable route for low-cost deposition of parylene AF-4 and its widespread use as a conformal coating where superior UV and oxidative stability is needed.

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