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Zewen Zuo, Guanglei Cui, Yu Wang, Junzhuan Wang, Lin Pu and Yi Shi Substrate-thickness Dependence of Hydrogenated Microcrystalline Silicon Nucleation Rate on Amorphous Silicon Layer Chemical Vapor Deposition 19

Version of Record online: 12 NOV 2013 | DOI: 10.1002/cvde.201307003

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The nucleation rate of µc-Si is dependent on the thickness of the a-Si:H layer and can be correlated with the stress inside the a-Si:H layer. The a-Si layer on glass initially grows in a 2D mode with a high interfacial stress inside, while the growth mode turns to S-K mode with increasing thickness, allowing for the interfacial stress to be relaxed through the formation of islands.

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