Kyung-Hyun Choi, Kamran Ali, Chang Young Kim and Nauman Malik Muhammad Characterization of Al2O3 Thin Films Fabricated at Low Temperature via Atomic Layer Deposition on PEN Substrates Chemical Vapor Deposition 20
Al2O3 films are deposited on PEN substrates through ALD at temperatures as low as 35 °C using Al(CH3)3 and H2O as precursors. The growth characteristics are systematically investigated under various deposition temperatures, Al(CH3)3 and H2O purge and exposure times, and number of ALD cycles. The surface morphology, chemical analysis, electrical, and optical properties of the films reveal their promise as feasible protective and insulating layers in electrical device applications.
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