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Timothee Blanquart, Jaakko Niinistö, Mikko Ritala and Markku Leskelä Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors Chemical Vapor Deposition 20

Article first published online: 20 JUL 2014 | DOI: 10.1002/cvde.201400055

Review: This review provides a brief description of ALD and presents studies on the deposition of thin films of groups 4 and 5 metal oxides using ALD. A description of the general ALD properties of homoleptic precursors, in addition to a review of the thermal ALD of groups 4 and 5 metal oxides from heteroleptic precursors, is presented. Trends in the properties of heteroleptic ALD precursors based on the literature review and recent experimental data are discussed.

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