Timothee Blanquart, Jaakko Niinistö, Mikko Ritala and Markku Leskelä Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors Chemical Vapor Deposition 20
Review: This review provides a brief description of ALD and presents studies on the deposition of thin films of groups 4 and 5 metal oxides using ALD. A description of the general ALD properties of homoleptic precursors, in addition to a review of the thermal ALD of groups 4 and 5 metal oxides from heteroleptic precursors, is presented. Trends in the properties of heteroleptic ALD precursors based on the literature review and recent experimental data are discussed.
Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf