Danghui Wang, Man Zhang, Ru Han, Yuhao Lu and Lu He An analytic drain current model for long-channel undoped gate stack surrounding-gate MOSFETs including interface fixed charges International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 27
Article first published online: 12 APR 2013 | DOI: 10.1002/jnm.1900
Complete the form below and we will send an e-mail message containing a link to the selected article on your behalf
Required = Required Field
Choose captcha format: Image or Audio. Click here if you need help.