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K. Rezgui, S. Aloulou, J. Rihani and M. Oueslati Competition between strain and confinement effects on the crystalline quality of InAs/GaAs (001) quantum dots probed by Raman spectroscopy Journal of Raman Spectroscopy 43

Version of Record online: 1 OCT 2012 | DOI: 10.1002/jrs.4122

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Nanometer-sized self-assembled quantum dots (QDs) (Fig.1) have emerged as a new exciting research field due to their unique electronic properties. These structures are formed following a strained coherent islanding in heteroepitaxial systems under substantial strain. Quantum dot phonons play an important role in the carrier relaxation and emission properties of QDs. Many issues related to the effects on QD phonon shifts of phonon confinement in the QD, the presence of inhomogeneous strain fields, alloy formation at the interfaces, and the wetting layer role are far from trivial. Raman scattering provides a direct measurement of QD phonon frequencies (Fig.2) and a valuable insight into these unresolved questions.

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